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| PN2222, PN2222A PN2222A is a Preferred Device General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C 1 2 3 http://onsemi.com Value 30 40 60 75 5.0 6.0 600 Unit Vdc Vdc Vdc mAdc mW mW/C 1 EMITTER COLLECTOR 3 2 BASE Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range MARKING DIAGRAM PN 222x YWW THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Symbol RJA RJC Max 200 83.3 Unit C/W C/W TO-92 CASE 29 STYLE 1 PN222x= Device Code x = 2 or A Y = Year WW = Work Week ORDERING INFORMATION Device PN2222 PN2222A PN2222ARLRA PN2222ARLRM PN2222ARLRP Package TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2000 1 November, 2000 - Rev. 0 Publication Order Number: PN2222/D PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 50 Vdc, IE = 0, TA = 125C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A PN2222A ICBO PN2222 PN2222A PN2222 PN2222A IEBO PN2222A IBL PN2222A - 20 nAdc - - - - - 0.01 0.01 10 10 100 nAdc Adc V(BR)CEO V(BR)CBO V(BR)EBO ICEX 30 40 60 75 5.0 6.0 - - - - - - - 10 Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) PN2222 PN2222A PN2222 PN2222A VBE(sat) PN2222 PN2222A PN2222 PN2222A - 0.6 - - 1.3 1.2 2.6 2.0 - - - - 0.4 0.3 1.6 1.0 Vdc - - - - 300 - - - Vdc - PN2222A only PN2222 PN2222A (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) PN2222 PN2222A hie PN2222A PN2222A hre PN2222A PN2222A hfe PN2222A PN2222A hoe PN2222A PN2222A rbCc PN2222A NF PN2222A - 4.0 dB 5.0 25 - 35 200 150 ps 50 75 300 375 mmhos - - 8.0 4.0 - 2.0 0.25 8.0 1.25 X 10-4 fT PN2222 PN2222A Cobo Cibo - - 30 25 k 250 300 - - - 8.0 pF pF MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time PN2222A only td tr ts tf - - - - 10 25 225 60 ns ns ns ns (VCC = 30 Vdc, VBE(off) = -0.5 Vdc, 0.5 IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) 2. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 -2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k 200 +16 V 0 < 2 ns CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% 1k 1N914 +30 V 200 -14 V < 20 ns CS* < 10 pF -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 3 PN2222, PN2222A 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 25C -55C VCE = 1.0 V VCE = 10 V 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k TJ = 125C Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.005 IC = 1.0 mA 10 mA 150 mA 500 mA 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 500 300 200 100 70 50 30 20 10 7.0 5.0 ts = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 t, TIME (ns) tf 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn-On Time Figure 6. Turn-Off Time http://onsemi.com 4 PN2222, PN2222A 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) 6.0 4.0 2.0 0 50 IC = 50 A 100 A 500 A 1.0 mA NF, NOISE FIGURE (dB) 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 500 VCE = 20 V TJ = 25C 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Ccb 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 50 Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k COEFFICIENT (mV/ C) 1.0 V +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 0.5 RqVB for VBE 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVC for VCE(sat) Figure 11. "On" Voltages Figure 12. Temperature Coefficients http://onsemi.com 5 PN2222, PN2222A PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 PN2222, PN2222A Notes http://onsemi.com 7 PN2222, PN2222A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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